R07DS0110EJ0300
(Previous: REJ03G0306-0200)
Rev.3.00
Sep 13, 2010
(Previous: REJ03G0306-0200)
Rev.3.00
Sep 13, 2010
BCR16PM-12LA
Triac
Medium Power Use
Features
- IT (RMS) : 16 A
- VDRM : 600 V
- IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note5
- Viso : 2000 V
- Insulated Type
- Planar Passivation Type
- UL Recognized : Yellow Card No. E223904
Outline
Applications
Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets, refrigerator, washing machine, electric fan, and other general controlling devicesMaximum Ratings
| Parameter | Symbol | Voltage class | Unit |
|---|---|---|---|
| 12 | |||
| Repetitive peak off-state voltageNote1 | VDRM | 600 | V |
| Non-repetitive peak off-state voltageNote1 | VDSM | 720 | V |
| Parameter | Symbol | Ratings | Unit | Conditions |
|---|---|---|---|---|
| RMS on-state current | IT (RMS) | 16 | A | Commercial frequency, sine full wave 360° conduction, Tc = 71°C |
| Surge on-state current | ITSM | 160 | A | 60Hz sinewave 1 full cycle, peak value, non-repetitive |
| I2t for fusing | I2t | 106.5 | A2s | Value corresponding to 1 cycle of half wave 60Hz, surge on-state current |
| Peak gate power dissipation | PGM | 5.0 | W | |
| Average gate power dissipation | PG (AV) | 0.5 | W | |
| Peak gate voltage | VGM | 10 | V | |
| Peak gate current | IGM | 2 | A | |
| Junction temperature | Tj | – 40 to +125 | °C | |
| Storage temperature | Tstg | – 40 to +125 | °C | |
| Mass | — | 2.0 | g | Typical value |
| Isolation voltage | Viso | 2000 | V | Ta = 25°C, AC 1 minute, T1·T2·G terminal to case |
- Note 1.Gate open.
Electrical Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test conditions | |
|---|---|---|---|---|---|---|---|
| Repetitive peak off-state current | IDRM | — | — | 2.0 | mA | Tj = 125°C, VDRM applied | |
| On-state voltage | VTM | — | — | 1.5 | V | Tc = 25°C, ITM = 25 A, Instantaneous measurement | |
| Gate trigger voltageNote2 | Ι | VFGTΙ | — | — | 1.5 | V | Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω |
| ΙΙ | VRGTΙ | — | — | 1.5 | V | ||
| ΙΙΙ | VRGTΙΙΙ | — | — | 1.5 | V | ||
| Gate trigger currentNote2 | Ι | IFGTΙ | — | — | 30Note5 | mA | Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω |
| ΙΙ | IRGTΙ | — | — | 30Note5 | mA | ||
| ΙΙΙ | IRGTΙΙΙ | — | — | 30Note5 | mA | ||
| Gate non-trigger voltage | VGD | 0.2 | — | — | V | Tj = 125°C, VD = 1/2 VDRM | |
| Thermal resistance | Rth (j-c) | — | — | 3.0 | °C/W | Junction to caseNote3 | |
| Critical-rate of rise of off-state commutating voltageNote4 | (dv/dt)c | 10 | — | — | V/μs | Tj = 125°C |
- Note 2.Measurement using the gate trigger characteristics measurement circuit.
- Note 3.The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
- Note 4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
- Note 5.High sensitivity (IGT ≤ 20mA) is also available. (IGT item: 1)
| Test conditions | Commutating voltage and current waveforms (inductive load) |
|---|---|
| 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 8.0 A/ms 3. Peak off-state voltage VD = 400 V |  |