< A >
Ashing
< C >
CAD
Contact hole
< D >
Device
Direct current characteristics
Dry etching
< G >
Gate
Gold fine wire
< I >
Ingot
Interlayer insulation film
< L >
Lead
Lithography
< N >
Nitride film
N-type diffusion layer
< O >
Oxide film

< P >
Package
Polysilicon
Positive method
Probe
P-type diffusion layer
< R >
Resist pattern
< S >
Silver paste resin
Source, Drain
Sputtering method
Stepper
< T >
Tester
Transistor
< U >
UV tape
< W >
Wafer
Wet etching